 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET BFQ225 NPN video transistor Product specification Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC05 1996 Sep 04 Philips Semiconductors Product specification NPN video transistor APPLICATIONS * Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION NPN silicon transistor encapsulated in a 3-lead plastic SOT128B package. PINNING PIN 1 2 3 DESCRIPTION emitter collector base Fig.1 Simplified outline SOT128B. 1 2 3 MGA323 BFQ225 handbook, halfpage QUICK REFERENCE DATA SYMBOL VCBO IC Ptot fT Cre Tj PARAMETER collector-base voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature Tmb = 25 C IC = 25 mA; VCE = 10 V IC = 0; VCB = 10 V CONDITIONS open emitter - - - 1 1.7 - TYP. MAX. 100 100 3.75 - - 175 V mA W GHz pF C UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter RBE = 100 open collector see Fig.2 see Fig.2 Tmb = 25 C; see Fig.3 - - - - - - -65 - MIN. MAX. 100 95 3 100 100 3.75 +175 175 V V V mA mA W C C UNIT 1996 Sep 04 2 Philips Semiconductors Product specification NPN video transistor BFQ225 103 handbook, halfpage MBG486 handbook, halfpage 4 MBG487 Ptot (W) IC (mA) 3 102 2 1 10 10 102 VCE (V) 103 0 0 100 Tmb (oC) 200 Tmb = 25 C. VCE 50 V. Fig.2 DC SOAR. Fig.3 Power derating curve. THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS Ptot = 3.75 W; Tmb = 25 C VALUE 40 UNIT K/W CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CER V(BR)EBO ICES hFE fT Cre PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain transition frequency feedback capacitance CONDITIONS IC = 0.1 mA; IE = 0 IC = 0; IE = 0.1 mA VCE = 50 V; VBE = 0 IC = 25 mA; VCE = 10 V; see Fig.4 IC = 25 mA; VCE = 10 V; f = 500 MHz; see Fig.5 IC = 0; VCB = 10 V; f = 1 MHz; see Fig.6 MIN. 100 95 3 - 20 - - - - - - - 1 1.7 TYP. MAX. - - - 100 - - - GHz pF UNIT V V V A collector-emitter breakdown voltage IC = 1 mA; RBE = 100 1996 Sep 04 3 Philips Semiconductors Product specification NPN video transistor BFQ225 handbook, halfpage 60 MBG488 handbook, halfpage 1.2 MBG489 hFE fT (MHz) 0.8 40 20 0.4 0 0 20 40 60 80 100 IC (mA) 0 10 20 50 IC (mA) 102 VCE = 10 V; tp = 500 s. VCE = 10 V; f = 500 MHz. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 Transition frequency as a function of collector current; typical values. handbook, halfpage 4 MBG490 Cre (pF) 3 2 1 0 0 2 4 6 8 10 VCB (V) f = 1 MHz. Fig.6 Feedback capacitance as a function of collector-base voltage; typical values. 1996 Sep 04 4 Philips Semiconductors Product specification NPN video transistor PACKAGE OUTLINE BFQ225 handbook, full pagewidth 10.4 max 3.8 3.6 3.8 0.56 max 24.2 max 8.6 max 2.5 max (1) 2.4 max 12.2 min 1 2 3 0.8 (3x) 0.6 2.54 2.54 0.65 max 1.6 4.6 max 10 MGA322 Dimensions in mm. Fig.7 SOT128B. 1996 Sep 04 5 Philips Semiconductors Product specification NPN video transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFQ225 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 04 6 |
Price & Availability of BFQ225
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |